| PART |
Description |
Maker |
| TB8S TB2S TB10S TB4S |
Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SCD4003 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| RS1505G |
VOLTAGE 50V ~ 1000V 15.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie...
|
| GBJ20005 GBJ2001 |
Voltage 50V ~ 1000V 20.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| GBL005 |
Voltage 50V ~ 1000V 4.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SM10200C |
Voltage 200V 10.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| S1M-T |
1A, 200V - 1000V Surface Mount Rectifiers
|
Taiwan Semiconductor Co...
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| S2GVB80-C S2GVB40-C S2GVB60-C |
Voltage 200V ~800V 2 Amp Glass Passivited Bridge Rectifers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| S2GBP40-C S2GBP80-C |
Voltage 200V ~800V 2.0 Amp Glass Passivited Bridge Rectifres
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
|
| LT1995CMS LT1995CDDPBF LT1995IDDPBF LT1995CMSTRPBF |
32MHz, 1000V/μs Gain Selectable Amplifier
30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; No of Pins: 10; Temperature Range: 0°C to 70°C INSTRUMENTATION AMPLIFIER, 11500 uV OFFSET-MAX, 32 MHz BAND WIDTH, PDSO10
30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 85°C INSTRUMENTATION AMPLIFIER, 13000 uV OFFSET-MAX, 32 MHz BAND WIDTH, PDSO10
30MHz, 1000V/µs Gain Selectable Amplifier; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
